Title :
Nonlinearities of capacitors realized by MOSFET gates
Author :
Behr, A.T. ; Schneider, M.C. ; Noceti, F.S. ; Montoro, C.G.
Author_Institution :
Lab. de Instrum. Eletronica, Univ. Federal de Sata Caterina, Florianopolis, Brazil
Abstract :
The capacitive gate structures available in digital oriented CMOS processes are reviewed, with emphasis on their use as linear capacitors. Experimental and analytical results indicate that the total harmonic distortion (THD) in an adequately biased (2.5 V) gate capacitor can be kept low (THD<-40 dB for a 3 V voltage swing)
Keywords :
CMOS integrated circuits; capacitors; digital integrated circuits; insulated gate field effect transistors; MOSFET gates; THD; capacitive gate structures; digital oriented CMOS processes; linear capacitors; total harmonic distortion; CMOS process; CMOS technology; Capacitance; Filters; Harmonic analysis; MOS capacitors; MOSFET circuits; System-on-a-chip; Total harmonic distortion; Voltage;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230270
