DocumentCode
3275078
Title
Nonlinearities of capacitors realized by MOSFET gates
Author
Behr, A.T. ; Schneider, M.C. ; Noceti, F.S. ; Montoro, C.G.
Author_Institution
Lab. de Instrum. Eletronica, Univ. Federal de Sata Caterina, Florianopolis, Brazil
Volume
3
fYear
1992
fDate
10-13 May 1992
Firstpage
1284
Abstract
The capacitive gate structures available in digital oriented CMOS processes are reviewed, with emphasis on their use as linear capacitors. Experimental and analytical results indicate that the total harmonic distortion (THD) in an adequately biased (2.5 V) gate capacitor can be kept low (THD<-40 dB for a 3 V voltage swing)
Keywords
CMOS integrated circuits; capacitors; digital integrated circuits; insulated gate field effect transistors; MOSFET gates; THD; capacitive gate structures; digital oriented CMOS processes; linear capacitors; total harmonic distortion; CMOS process; CMOS technology; Capacitance; Filters; Harmonic analysis; MOS capacitors; MOSFET circuits; System-on-a-chip; Total harmonic distortion; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0593-0
Type
conf
DOI
10.1109/ISCAS.1992.230270
Filename
230270
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