• DocumentCode
    3275247
  • Title

    Tunable InGaAs/InAlAs/InP far-IR detector based on plasmon resonance

  • Author

    Peale, Robert E. ; Saxena, Himanshu ; Buchwald, Walter R.

  • Author_Institution
    Univ. of Central Florida, Orlando, FL
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An InGaAs/InP based HEMT with grating gate is investigated as a THz detector. Resonant THz absorption by two-dimensional plasmons is tunable with a gate bias.
  • Keywords
    aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; plasmons; submillimetre wave detectors; HEMT; InGaAs-InAlAs-InP; grating gate; high electron mobility transistor; plasmon resonance; resonant THz absorption; Absorption; Detectors; Gratings; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Plasmons; Resonance; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665559
  • Filename
    4665559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3275247