DocumentCode
3275332
Title
A simulation research on the reverse recovery characteristics of PIN diode
Author
Zhang, Peng ; Wen, Xuhui ; Zhong, Yulin ; Liu, Jun
fYear
2011
fDate
15-17 April 2011
Firstpage
5649
Lastpage
5651
Abstract
From the basis of math-physics , the reverse recovery characteristics of the power PIN diode are studied in detail .The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics . The simulation comparison between the new model with the standard one based charge-control verifies the model availability.
Keywords
SPICE; p-i-n diodes; power semiconductor diodes; semiconductor device models; SPICE model; charge control; power PIN diode; reverse recovery characteristics; reverse recovery current; simulation model; Availability; Electrical engineering; Integrated circuit modeling; PIN photodiodes; SPICE; PIN; base region; reverse recovery; stored charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-8036-4
Type
conf
DOI
10.1109/ICEICE.2011.5777366
Filename
5777366
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