DocumentCode :
3275332
Title :
A simulation research on the reverse recovery characteristics of PIN diode
Author :
Zhang, Peng ; Wen, Xuhui ; Zhong, Yulin ; Liu, Jun
fYear :
2011
fDate :
15-17 April 2011
Firstpage :
5649
Lastpage :
5651
Abstract :
From the basis of math-physics , the reverse recovery characteristics of the power PIN diode are studied in detail .The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics . The simulation comparison between the new model with the standard one based charge-control verifies the model availability.
Keywords :
SPICE; p-i-n diodes; power semiconductor diodes; semiconductor device models; SPICE model; charge control; power PIN diode; reverse recovery characteristics; reverse recovery current; simulation model; Availability; Electrical engineering; Integrated circuit modeling; PIN photodiodes; SPICE; PIN; base region; reverse recovery; stored charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
Type :
conf
DOI :
10.1109/ICEICE.2011.5777366
Filename :
5777366
Link To Document :
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