DocumentCode
3275624
Title
Integrated Horn Antenna for THz Photomixing in LTG-GaAs
Author
Peytavit, E. ; Lampin, J.F. ; Akalin, T. ; Mollot, F. ; Hindle, F. ; Yang, C. ; Mouret, G.
Author_Institution
Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
The investigation of THz generation using low-temperature-grown GaAs (LTG-GaAs) photoconductors integrated with horn antennas is reported. Results obtained using a photomixing experiment are presented. A maximum generated power of 1 muW at 780 GHz was achieved for an optical power of 2times80 mW and a photocurrent of 1 mA.
Keywords
III-V semiconductors; gallium arsenide; horn antennas; microwave photonics; photoconducting devices; photoconducting materials; photoconductivity; submillimetre wave antennas; submillimetre wave generation; GaAs; THz generation; THz photomixing; current 1 mA; frequency 780 GHz; integrated horn antenna; low-temperature-grown GaAs photoconductors; photocurrent; power 1 muW; Coatings; Dipole antennas; Fingers; Gold; Horn antennas; Lenses; Lithography; Optical films; Photoconductivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665578
Filename
4665578
Link To Document