Nano metal particles for low temperature interconnect technology

Author

Moon, Kyoung-Sik ; Dong, Hai ; Pothukuchi, Suresh ; Li, Yi ; Wong, C.P.

Author_Institution

Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2004

fDate

1-4 June 2004

Firstpage

1983

Abstract

For low temperature interconnects, melting point (T_m) depression and sintering behavior of metal nano particles are investigated. Nano Ag particles used (∼20 nm) exhibited obvious sintering behavior, rather than typical melting behavior, at significantly lower temperatures (∼150 °C) than its T_m (1235°C) . The particle surface was characterized by XPS, FTIR and TGA. The thermal behavior was studied by DSC and TGA. The crystal structure of the particle was examined by XRD. The shrinkage of the nano particles during sintering was monitored by TMA. Sintering behavior of the nano particles is discussed.

Keywords

Fourier transform spectra; X-ray diffraction; X-ray photoelectron spectra; adhesives; conducting polymers; contact resistance; densification; differential scanning calorimetry; filled polymers; heat treatment; infrared spectra; melting point; nanocomposites; nanoparticles; particle size; powder metallurgy; scanning electron microscopy; shrinkage; silver; sintering; Ag; DSC; FTIR spectra; TGA; XPS; XRD; conductive polymer-metal composite; contact resistance; crystal structure; densification; heat treatment; lattice diffusion; low temperature interconnect; melting point depression; metal nanoparticles; particle surface; scanning electron microscopy; shrinkage; sintering behavior; Contact resistance; Fuses; Instruments; Integrated circuit interconnections; Materials science and technology; Monitoring; Polymers; Scanning electron microscopy; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2004. Proceedings. 54th

Print_ISBN

0-7803-8365-6

Type

conf

DOI

10.1109/ECTC.2004.1320399

Filename

1320399