Unclamped inductive switching dynamics in lateral and vertical power DMOSFETs

Author

Chinnaswamy, K. ; Khandelwal, P. ; Trivedi, M. ; Shenai, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

1085

Abstract

Unclamped inductive switching (UIS) is a routine method for characterizing the ruggedness of a device in the industry. Using this method, comparison of the ruggedness of a vertical DMOS and a lateral DMOS is presented in this paper. A complete understanding of the dynamics in each of the devices under UIS conditions is achieved by comparing the results obtained through extensive measurements and an advanced 2D device and circuit simulator. Also presented in this paper is a comparison of the parasitic bipolar action in both the devices under this high stress condition

Keywords

circuit simulation; power MOSFET; semiconductor device models; semiconductor device testing; switching; 2D device; avalanche energy specification; circuit simulator; device ruggedness; electro-thermal effects; high stress condition; lateral power DMOSFET; parasitic bipolar action; unclamped inductive switching dynamics; vertical power DMOSFET; Avalanche breakdown; Bipolar transistors; Circuit simulation; Computer science; Design optimization; Electric breakdown; Radio frequency; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE

Conference_Location

Phoenix, AZ

ISSN

0197-2618

Print_ISBN

0-7803-5589-X

Type

conf

DOI

10.1109/IAS.1999.801639

Filename

801639