DocumentCode
3276234
Title
Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow
Author
Deml, C.
Author_Institution
Infineon Technol. AG, Munich, Germany
Volume
2
fYear
1999
fDate
3-7 Oct. 1999
Firstpage
1093
Abstract
The measurement principle of the input and reverse transfer capacitance is shown. Function, stability and operation of the measurement circuits is discussed. The on state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.
Keywords
capacitance measurement; power MOSFET; semiconductor device measurement; MOS-gated power transistors; high current conditions; high current flow; input capacitance measurement; measurement circuits operation; nonlinear characteristic; on state capacitances; power DMOS transistor; regulation circuit; reverse transfer capacitance measurement; stability; Capacitance measurement; Circuits; Current measurement; Electrical resistance measurement; Heat sinks; Power measurement; Power transistors; Q measurement; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location
Phoenix, AZ, USA
ISSN
0197-2618
Print_ISBN
0-7803-5589-X
Type
conf
DOI
10.1109/IAS.1999.801640
Filename
801640
Link To Document