DocumentCode
3276244
Title
Dynamic SOA of power MOSFETs
Author
Keskar, N. ; Trivedi, M. ; Shenai, K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume
2
fYear
1999
fDate
1999
Firstpage
1098
Abstract
With the increase in operating frequency as well as voltage and current levels, power devices have to sustain a number of stress causing phenomena. For proper selection for an application, the specifications for the device need to given with emphasis on the kind of stresses it will be subjected to in the application. In that respect, the data-sheet specifications are incomplete in that they fail to predict the safe operating area of the device in the actual operating conditions resulting in field failures. Long-term effects of stresses including the degradation of the device characteristics with “age in an application” needs to be characterized. From that view a dynamic SOA is proposed. This includes an experimentally determined factor, which varies with the age of the device as per the stresses encountered by the device. The variation is modeled for different applications. It is expected to aid greatly in specific device selection for an application
Keywords
DC-DC power convertors; power MOSFET; switching circuits; ZVT boost converter; data-sheet specifications; device age; dynamic SOA; dynamic safe operating area; long-term stress effects; power MOSFET; specific device selection; stress causing phenomena; Bipolar transistors; Circuits; Degradation; Diodes; Inductance; MOSFETs; Manufacturing; Semiconductor optical amplifiers; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location
Phoenix, AZ
ISSN
0197-2618
Print_ISBN
0-7803-5589-X
Type
conf
DOI
10.1109/IAS.1999.801641
Filename
801641
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