DocumentCode :
3276558
Title :
Silicon carbide power device characterization for HEVs
Author :
Ozpineci, Burak ; Tolbert, Leon M. ; Islam, Syed K.
Author_Institution :
The University of Tennessee
fYear :
2002
fDate :
24-25 Oct. 2002
Firstpage :
93
Lastpage :
97
Abstract :
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SIC devices in power conversion systems. In this study, findings of SIC research at Oak Ridge National Laboratory (OWL), TN, USA, including SIC device design and system modeling studies, are discussed.
Keywords :
Hybrid electric vehicles; Laboratories; Power electronics; Power semiconductor switches; Schottky diodes; Silicon carbide; Switching converters; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics in Transportation, 2002
Conference_Location :
Auburn Hills, Michigan, USA
Print_ISBN :
0-7803-7492-4
Type :
conf
DOI :
10.1109/PET.2002.1185555
Filename :
1185555
Link To Document :
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