DocumentCode
3276740
Title
CMOS distributed amplifiers: an integrated solution for broadband optical and wireless communication applications
Author
Moez, Kambiz K. ; Elmasry, Mohamed I.
Author_Institution
Dept. of E&CE, Waterloo Univ., Ont., Canada
fYear
2005
fDate
6-8 March 2005
Firstpage
136
Lastpage
139
Abstract
This article reviews the use of CMOS distributed amplifiers for broadband optical and wireless communication applications. CMOS distributed amplifiers are justified as a low-cost and highly integrated solution for broad amplifications. As a critical component of DAs, the design and modeling of on-chip inductors are studied. As a design example, a novel four-stage CMOS distributed amplifier for SONET OC-768 optical communication applications is presented. The design is based on a new methodology for the design of CMOS distributed amplifiers to achieve the largest possible bandwidth in a specific CMOS technology. The new design employs smaller spiral inductors that not only reduce the chip area significantly but also increase the bandwidth of the amplifier. A bandwidth of 29 GHz is achieved using a four-stage DA in 0.18 μm standard CMOS technology.
Keywords
CMOS integrated circuits; SONET; broadband networks; distributed amplifiers; inductors; optical communication equipment; radiofrequency amplifiers; 0.18 mum; 29 GHz; CMOS distributed amplifier; SONET; broadband optical communication; on-chip inductor; optical receiver; spiral inductor; ultrawideband technology; wireless communication; Bandwidth; CMOS technology; Distributed amplifiers; Inductors; Integrated optics; Optical design; SONET; Semiconductor device modeling; Stimulated emission; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Optical Communications Networks, 2005. WOCN 2005. Second IFIP International Conference on
Print_ISBN
0-7803-9019-9
Type
conf
DOI
10.1109/WOCN.2005.1436005
Filename
1436005
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