Advances in linearised GaAs MESFET circuit design techniques

Author

Haigh, D.G. ; Radmore, P.M. ; Parker, A.E.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. CoIl., London, UK

Volume

4

fYear

1992

fDate

3-6 May 1992

Firstpage

2037

Abstract

Discusses the synthesis of linearized conductance functions using GaAs MESFETs which have an approximately square-law drain current versus gate-source voltage characteristic. The functions for realization are derived and implemented in three basic circuit configurations: transconductance, self-conductance, and buffer function. The new circuits outperformed previous circuits in terms of chip area, power consumption, and efficiency. The alternative concept of voltage linearization is introduced. It was used to realize lossless buffer circuits. Optimization of FET gate widths to allow a verified realistic FET model was demonstrated

Keywords

III-V semiconductors; Schottky gate field effect transistors; buffer circuits; field effect integrated circuits; linear integrated circuits; FET gate widths; FET model; GaAs; buffer function; chip area; efficiency; gate-source voltage; linearised GaAs MESFET circuit; linearized conductance functions; lossless buffer circuits; power consumption; self-conductance; square-law drain current; transconductance; voltage linearization; Circuit synthesis; Educational institutions; FETs; Gallium arsenide; MESFET circuits; Mathematics; Physics computing; Signal synthesis; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.230375

Filename

230375