Title :
Equivalent circuit model of noise for a separate absorption and multiplication avalanche photodiode (SAM-APD)
Author :
Soroosh, M. ; Moravvej-Farshi, M.K. ; Zarifkar, A.
Author_Institution :
Dept. of Opt. Syst. & Technol., Iran Telecommun. Res. Center, Iran
Abstract :
In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
Keywords :
avalanche photodiodes; equivalent circuits; light absorption; optical noise; InAlAs; InGaAs; SAM-APD; carrier rate equation; equivalent circuit noise model; separate absorption and multiplication avalanche photodiode; Absorption; Avalanche photodiodes; Charge carrier processes; Circuit noise; Equations; Equivalent circuits; Impact ionization; Optical noise; Optical receivers; Optical sensors;
Conference_Titel :
Wireless and Optical Communications Networks, 2005. WOCN 2005. Second IFIP International Conference on
Print_ISBN :
0-7803-9019-9
DOI :
10.1109/WOCN.2005.1436015
