Antenna-coupled GaAs SBD detectors for 100 GHz band radiation

Author

Uchida, T. ; Hayashi, K. ; Furuya, T. ; Tachiki, T. ; Idehara, T. ; Yasuoka, Y.

Author_Institution

Nat. Defense Acad., Yokosuka

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

Thin-film slot antenna coupled GaAs Schottky barrier diodes (SBDs) were fabricated using a micro-fabrication technique, and detection properties such as antenna pattern, video detection and mixing were investigated at 100 GHz band. The E-plane and H-plane antenna patterns agreed well with the theoretical values and the operation of one-wavelength antenna was confirmed. The fabricated device had a noise equivalent irradiance (NEI) of about 2.0times10^-8 W/cm²Hz^1/2. The IF signals were observed up to the harmonic number of 7.

Keywords

III-V semiconductors; Schottky diodes; antenna radiation patterns; gallium arsenide; microfabrication; semiconductor device noise; slot antennas; E-plane plane antenna patterns; GaAs; H-plane antenna patterns; IF signals; NEI; SBD; Schottky barrier diodes; antenna pattern; frequency 100 GHz; microfabrication technique; noise equivalent irradiance; thin-film slot antenna coupled detectors; video detection; Antenna measurements; Antenna theory; Frequency; Gallium arsenide; Gold; Radiation detectors; Schottky barriers; Schottky diodes; Slot antennas; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665655

Filename

4665655