Title :
An Ultra Wide-Band VCO Using MOS Varactor in 0.35µm SiGe BiCMOS Technology
Author :
Mokari, H. ; Neyestanak, A. A Lotfi ; Zandkarimi, G.
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ. (IAU), Tehran, Iran
Abstract :
The fully integrated voltage-controlled oscillator is one of the most important and challenging building blocks in the implementation of a single-chip in today´s communication system. In this paper design and realization of an ultra linear wide-band, low phase noise and low current consumption to achieve 4.16~6.1GHz tuning range, LC VCO for WLAN application is presented. Configuration of this circuit is simulated by AMOS 0.35 mum SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistor (HBTs).MOS varactor is used to realize a wide tuning range. The phase noise level is -103.478 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.9 GHz. the Kvco changes from 174 MHz/V to 205 MHz/V. It topology giving a linear wide tuning range greater 1900 MHz, from 4.160 GHz up to 6.035 GHz with a supply voltage of 3.0 V with DC current consumption is 2.26 mA.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; varactors; voltage-controlled oscillators; wireless LAN; BiCMOS technology; HBT; LC VCO; MOS varactor; SiGe; WLAN application; current 2.26 mA; frequency 4.16 GHz to 6.1 GHz; fully integrated voltage-controlled oscillator; heterojunction bipolar transistor; size 0.35 mum; ultra wideband VCO; voltage 3 V; BiCMOS integrated circuits; Circuit optimization; Germanium silicon alloys; Phase noise; Silicon germanium; Tuning; Ultra wideband technology; Varactors; Voltage-controlled oscillators; Wireless LAN;
Conference_Titel :
Computational Intelligence, Communication Systems and Networks, 2009. CICSYN '09. First International Conference on
Conference_Location :
Indore
Print_ISBN :
978-0-7695-3743-6
DOI :
10.1109/CICSYN.2009.49