Title :
Modeling the Growth and Annealing of Dislocation Loops
Author_Institution :
Motorola Advanced Custom Technology Center
fDate :
31 May-1 Jun 1992
Keywords :
Absorption; Boron; Equations; Implants; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicon; Stress; Temperature distribution;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
Print_ISBN :
0-7803-0516-7
DOI :
10.1109/NUPAD.1992.673842
