DocumentCode :
3277974
Title :
Circular photogalvanic effect due to quantum interference in the terahertz radiation absorption
Author :
Reitmaier, C. ; Tarasenko, S.A. ; Olbrich, P. ; Plohmann, D. ; Karch, J. ; Lechner, V. ; Kvon, Z.D. ; Ganichev, S.D.
Author_Institution :
Terahertz Center, Univ. of Regensburg, Regensburg
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
3
Abstract :
We report on the observation of the circular (radiation helicity dependent) and linear photogalvanic effects in MOSFETs with n-type inversion channels fabricated on vicinal silicon surfaces. The photocurrents are excited in unbiased transistors across the source and drain contacts by terahertz radiation at normal incident. We developed the miscroscopic theory of the circular photogalvanic effect demonstrating that the helicity-dependent photocurrent in silicon structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the free carrier (Drude-like) radiation absorption.
Keywords :
MOSFET; elemental semiconductors; photoconductivity; photovoltaic effects; quantum interference phenomena; silicon; submillimetre waves; MOSFET; Si; circular photogalvanic effect; free carrier radiation absorption; n-type inversion channels; photocurrents; quantum interference; silicon surfaces; terahertz radiation absorption; unbiased transistors; Absorption; Interference; Laser excitation; MOSFETs; Microscopy; Photoconductivity; Photovoltaic effects; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665695
Filename :
4665695
Link To Document :
بازگشت