DocumentCode :
3278295
Title :
Room temperature terahertz detection based on plasma resonance of electrons in an Antenna-Coupled GaAs MESFET
Author :
Kim, Sangwoo ; Zimmerman, Jeramy D. ; Focardi, Paolo ; Wu, Dong Ho ; Gossard, Arthur C. ; Sherwin, Mark S.
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
Plasma resonance of electrons is observed in an antenna-coupled metal-semiconductor-field-effect-transistor (MESFET) by sweeping bias voltages. This resonant absorption is exploited to realize a room temperature terahertz detector with a measured noise equivalent power (NEP) ~ 5times10-8 W/Hzfrac12.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device noise; slot antennas; submillimetre wave detectors; GaAs; MESFET; NEP; antenna-coupled metal-semiconductor-field-effect-transistor; noise equivalent power; plasma resonance; resonant absorption; room temperature terahertz detection; temperature 293 K to 298 K; twin-slot antennas; Absorption; Antenna measurements; Detectors; Electrons; Gallium arsenide; MESFETs; Plasma measurements; Plasma temperature; Resonance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665711
Filename :
4665711
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3278295
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