Title :
Design and fabrication of quantum cascade laser structure based on III-Nitride semiconductors in the THz frequency range
Author :
Terashima, W. ; Hirayama, H.
Author_Institution :
Terahertz Quantum Device Lab., RIKEN, Sendai
Abstract :
We performed the design and fabrication of a resonant phonon-type quantum cascade structure using III-Nitride semiconductors for emission in the 5 to 12 terahertz frequency range. We could design a quantum cascade structure in which population inversion could be obtained by making calculations based on a self-consistent rate equation model. We also successfully fabricated the designed quantum cascade structure by radio-frequency molecular beam epitaxy.
Keywords :
III-V semiconductors; aluminium compounds; gallium alloys; indium compounds; laser beams; molecular beam epitaxial growth; phonons; population inversion; quantum cascade lasers; semiconductor lasers; submillimetre wave lasers; wide band gap semiconductors; GaN-In0.05Al0.23Ga0.72N; III-nitride semiconductors; THz frequency range; frequency 5 THz to 12 THz; population inversion; quantum cascade laser structure design; radio-frequency molecular beam epitaxy; resonant phonons; self-consistent rate equation model; Electrons; Frequency; III-V semiconductor materials; Optical design; Optical device fabrication; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Resonance;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665723
