An image rejection down-converter for low-IF receivers in 130 nm CMOS

Author

Fang, S.J. ; Bellaouar, A. ; Lee, S.T. ; Allstot, D.J.

Author_Institution

Univ. of Washington, Seattle, WA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

57

Lastpage

60

Abstract

Implemented in 4.1 mm² in 130 nm CMOS, a dual-conversion image rejection down-converter applied to the WCDMA standard draws 13 mA from 1.8 V. Using an IF of 2.5 MHz, the WCDMA image rejection band is widened from between 0.58 MHz and 4.42 MHz to between 0.48 MHz and 5.2 MHz - a bandwidth ratio of 10.8 - to accommodate process, voltage, and temperature variations in high-volume production. Ten samples are measured and fully characterized: average image rejection ratio (IRR) is 46.6 dBc; gain is 12 dB; NF is 10.8 dB. Typical IRR is 44.8 dBc, 46.5 dBc, and 47.5 dBc at -20°C, 25°C, and 80°C, respectively.

Keywords

CMOS integrated circuits; code division multiple access; frequency convertors; integrated circuit design; radio receivers; 0.48 to 5.2 MHz; 1.8 V; 10.8 dB; 12 dB; 13 mA; 130 nm; 3.84 MHz; 4.72 MHz; CMOS; WCDMA; dual-conversion down converter; image rejection down-converter; image rejection ratio; low-IF receivers; Bandwidth; Filters; Frequency; Image converters; Mixers; Multiaccess communication; Production; Receivers; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320525

Filename

1320525