A high performance silicon bipolar monolithic RF linear power amplifier for W-LAN IEEE 802.11g applications

Author

Scuderi, Antonino ; Cristaudo, Domenico ; Carrara, Francesco ; Palmisano, Giuseppe

Author_Institution

STMicroelectronics, Catania, Italy

fYear

2004

fDate

6-8 June 2004

Firstpage

79

Lastpage

82

Abstract

A monolithic 2.5 GHz linear power amplifier for W-LAN IEEE 802.11g applications was integrated using a low cost 22 GHz f_T silicon bipolar process. The three-stage power amplifier exhibits a 26 dBm output 1 dB compression point, 30 dB power gain, and 52% maximum power-added efficiency, while using a low quiescent current, of 40 mA. Thanks to an optimized linearization technique, the power amplifier is able to comply with the stringent error vector magnitude requirement of the standard up to a 21.5 dBm output power level, with a 32% power-added efficiency. The power amplifier includes advanced bias functionalities and a fully integrated average channel power detector.

Keywords

UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; integrated circuit design; linearisation techniques; monolithic integrated circuits; optimisation; silicon; wireless LAN; 2.5 GHz; 22 GHz; 30 dB; 40 mA; IEEE 802.11g WLAN; Si; average channel power detector; bias functionalities; error vector magnitude requirement; linear power amplifier; monolithic RF power amplifier; power-added efficiency; silicon bipolar process; Costs; Gain; High power amplifiers; Linearization techniques; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320532

Filename

1320532