A 77 GHz SiGe power amplifier for potential applications in automotive radar systems

Author

Pfeiffer, Ullrich R. ; Reynolds, Scott K. ; Floyd, Brian A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

91

Lastpage

94

Abstract

We present the performance of a 77 GHz power amplifier for potential applications directed towards automotive radar systems. The circuit was fabricated in a SiGe bipolar preproduction technology. A balanced two-stage common emitter circuit topology was used to achieve 6.1 dB of power gain at 77 GHz and 11.6 dBm output power at 1dB compression. The power amplifier uses a single 2.5 V supply and was fully integrated (including matching elements) to demonstrate its low-cost potential. First experimental results show its broadband characteristic from 40 GHz to 80 GHz and its temperature dependence up to 130°C.

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; integrated circuit design; millimetre wave power amplifiers; network topology; road vehicle radar; wideband amplifiers; 2.5 V; 40 to 80 GHz; 6.1 dB; SiGe; W-band; automotive radar; bipolar technology; broadband amplifier; circuit design; circuit topology; power amplifier; power gain; preproduction technology; two-stage common emitter circuit; Automotive engineering; Broadband amplifiers; Circuit topology; Gain; Germanium silicon alloys; Integrated circuit technology; Power amplifiers; Power generation; Radar applications; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320535

Filename

1320535