• DocumentCode
    3278848
  • Title

    Electrical characterization of a carbon nanoelectrode instrumented nanopore sensor

  • Author

    Spinney, P.S. ; Collins, S.D. ; Smith, R.L. ; Howitt, D.G.

  • Author_Institution
    Micro Syst. & Lab., Univ. of Maine, Orono, ME, USA
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    This is the first report of a transverse carbon nanoelectrode for sensing translation events through a solid state nanopore. This device has application to the study of molecular transport and DNA sequencing. The device is fabricated on a silicon nitride membrane using electron beam stimulated oxidation of carbon (EBSOC) to first create a carbon nanowire. The nanowire is then encapsulated in a top layer of silicon nitride. A nanopore is then milled through both the silicon nitride membrane and carbon nanowire using a high energy transmission electron microscope (TEM) or a focused ion beam (FIB). This creates a pair of electrodes that are self-aligned to the nanopore. With state-of-the-art FIB techniques pores and electrode gaps ¿ 10 nm are achieved. In this report the results of electrical testing of a device with a 25 nm pore are presented, including current-voltage characterization in air and the detection of a nanoparticle translocating the nanopore in solution.
  • Keywords
    DNA; bioMEMS; biological techniques; carbon; focused ion beam technology; microsensors; molecular biophysics; nanowires; silicon compounds; transmission electron microscopy; C; DNA sequencing; EBSOC; SiN; TEM; carbon nanowire; current-voltage characterization; electron beam stimulated oxidation of carbon; focused ion beam; molecular transport; nanoparticle transport detection; nanopore sensor; silicon nitride membrane; size 25 nm; solid state nanopore; translation event sensing; transmission electron microscope; transverse carbon nanoelectrode; Biomembranes; DNA; Electrodes; Electron beams; Instruments; Nanoporous materials; Nanoscale devices; Sensor phenomena and characterization; Silicon; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398127
  • Filename
    5398127