CMOS K-band LNAs design counting both interconnect transmission line and RF pad parasitics

We have successfully demonstrated K-band low-noise amplifiers (LNAs) in 0.18 μm standard CMOS process and validated their performance at the specified frequencies of 24 GHz and 26 GHz. The impact of the interconnect line and RF pad parasitics on the frequency characteristics is investigated. The measured LNA performance agrees well with the simulated one, as the parasitic effects are well taken into account. The 24 GHz LNA obtains a 12.9 dB gain and a 5.6 dB noise figure (NF). The 26 GHz LNA achieves an. 8.9 dB gain with a 6.9 dB NF. The input referred third-order intercept point (IIP3) is measured to be higher than +2 dBm for both LNAs. Each LNA consumes 30 mA of DC current from a 1.8 V power supply.