Title :
The IGBT-an optimized device for system integration
Author_Institution :
Semicond. Group, Siemens AG, Munich, Germany
Abstract :
Recent innovations have clearly shown that the power IGBT switch concept has considerable scope for further development in terms of improving saturation voltage in the on-state as well as dynamic losses whilst maintaining ruggedness and the excellent limit load tolerances. Both the horizontal optimization of the cell structure and the vertical optimization of the Si material have led a to dramatic improvement in V CE sat values. This new NPT concept is now applied in the voltage range between 600 V and 3.5 kV. By means of additional charge carrier lifetime adjustment, the turn-off behavior has been improved in terms of lower tail losses. This means the IGBT can now be used in applications which to date have been the preserve of power MOSFETs. The Econopack has extended package families to allow the implementation of new, more economical, flexible and reliable construction techniques for DC/AC power converters for motor drive systems. The Econopack is a solderable package with exceptionally low parasitic inductance and simple parallel connection
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; optimisation; power bipolar transistors; power semiconductor switches; semiconductor device packaging; 600 V to 3.5 kV; DC/AC power converters; Econopack solderable package; charge carrier lifetime; device optimisation; dynamic losses; horizontal optimization; limit load tolerances; motor drive systems; power IGBT switches; ruggedness; saturation voltage; system integration; tail losses; turn-off behavior; Charge carrier lifetime; Insulated gate bipolar transistors; MOSFETs; Packaging; Power system economics; Power system reliability; Switches; Tail; Technological innovation; Voltage;
Conference_Titel :
Power Conversion Conference - Nagaoka 1997., Proceedings of the
Conference_Location :
Nagaoka
Print_ISBN :
0-7803-3823-5
DOI :
10.1109/PCCON.1997.645650
