DocumentCode
3278943
Title
III-V based room temperature THz detectors
Author
Perera, A. G Unil ; Jayaweera, P. Viraj ; Matsik, Steven G. ; Liu, Hui Chun
Author_Institution
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
Results are reported on a GaAs/AlGaAs based THz detector operating up to room temperature. The detector gave a response of 4 A/W at 330 K and 0.015 A/W at 309 K indicating the response is due to effects of thermally generated carriers. By optimizing the material it should be possible to improve the detector response.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; terahertz wave detectors; thermally stimulated currents; GaAs-AlGaAs; III-V material; THz detectors; bolometer; p-type intraband detectors; temperature 309 K; temperature 330 K; thermally generated carriers; Absorption; Astronomy; Design optimization; Detectors; Frequency; Gallium arsenide; III-V semiconductor materials; Physics; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665744
Filename
4665744
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