Title :
Analysis of Writing and Erasing Procedure of Flotox EEPROM Using the New Charge Balance Condition (CBC) Model
Author :
Sugino, Satoshi ; Takakura, Nobuyuki ; Chen, Datong ; Dutton, Robert W.
Author_Institution :
Matsushita Hectric Works, Ltd.
fDate :
31 May-1 Jun 1992
Keywords :
Capacitance; Charge carrier processes; EPROM; Integral equations; Integrated circuit modeling; Laboratories; Numerical models; Poisson equations; Tunneling; Writing;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
Print_ISBN :
0-7803-0516-7
DOI :
10.1109/NUPAD.1992.673848
