Calibration of a piezoresistive stress sensor in [100] silicon test chips

Author

Zhong, Z.W. ; Xiaowu Zhang ; Sim, B.H. ; Wong, E.H. ; Teo, P.S. ; Iyer, M.K.

Author_Institution

Sch. of Mech. & Production Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

10-12 Dec. 2002

Firstpage

323

Lastpage

326

Abstract

In this paper, we report the experimental results for calibration of a 2D piezoresistive stress sensor using a four-point bending fixture. The sensor on the [100] test chips was able to accurately measure plane stress components in a temperature compensated manner. The resistance of stress sensors was found to vary linearly with the applied stress. The piezoresistive coefficient was calculated and found to coincide with the reported values for silicon. A further study of the thermally induced stresses was also carried out to determine the resistance change that varied linearly with temperature.

Keywords

calibration; electric sensing devices; elemental semiconductors; piezoresistive devices; silicon; stress measurement; thermal stresses; 2D piezoresistive stress sensor; Si; [100]silicon sensors; calibration; four-point bending fixture; piezoresistive coefficient; plane stress component measurement; stress sensor resistance; temperature dependent resistance change; thermally induced stresses; Calibration; Electrical resistance measurement; Fixtures; Piezoresistance; Silicon; Stress measurement; Temperature sensors; Testing; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2002. 4th

Print_ISBN

0-7803-7435-5

Type

conf

DOI

10.1109/EPTC.2002.1185691

Filename

1185691