Foundry 0.13 μm CMOS modeling for MS/μwave SOC design at 10 GHz and beyond

Author

Yang, M.T. ; Yeh, T.J. ; Wang, Y.J. ; Ho, Patricia P C ; Lin, Y.R. ; Kuo, Darry C W ; Voinigescu, Sorin P. ; Tazlauanu, Mihai ; Chia, Y.T. ; Young, K.L.

Author_Institution

TSMC, Hsin-Chu, Taiwan

fYear

2004

fDate

6-8 June 2004

Firstpage

167

Lastpage

170

Abstract

The paper reports on the first unitary set of geometry-scalable, wide-band compact models for all the components of a 0.13 μm RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models is achieved at the device level as well as by comparing measurements and simulation results of the S-parameter response and jitter generation of high-speed circuits operating above 10 GHz from a single 1.2 V supply.

Keywords

CMOS integrated circuits; S-parameters; equivalent circuits; integrated circuit design; integrated circuit modelling; microwave integrated circuits; millimetre wave integrated circuits; semiconductor device models; system-on-chip; 0.13 micron; 1.2 V; 10 to 50 GHz; CMOS modeling; MM-wave SOC design; RF CMOS technology; S-parameter response; active device models; compact models; geometry-scalable models; high-speed circuits; jitter generation; lumped-equivalent circuit; microwave SOC design; passive device models; silicon foundry industry; unitary model set; wide-band models; CMOS technology; Circuit simulation; Foundries; Jitter; Paper technology; Radio frequency; Scattering parameters; Semiconductor device modeling; Solid modeling; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320560

Filename

1320560