A distributed scalable SiGe power device large signal model based on MEXTRAM 504

Author

Yoon, S.-W. ; Laskar, J. ; Cho, D.H. ; Hong, K.S. ; Shin, H.J. ; Park, K.W. ; Yi, S.D. ; Suh, K.-P. ; Park, B.H.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

175

Lastpage

178

Abstract

We present a large signal power device model consisting of MEXTRAM BJT models of a small unit device and external lumped elements explaining all the parasitic effects resulting from the interconnection layout. The parasitic elements are included in the model in a distributed way. For the unit device, the device with an emitter size of 24 μm² is modeled by a MEXTRAM 504 BJT model, which shows accurate high-current behaviors such as Kirk effect, high-injection effect, and quasi-saturation effect. The power device with an emitter size of 480 μm² is designed to verify the model. DC, small signal, and large signal measurements are compared with the simulation results using the model; both results are quite well matched not only on DC and small signal characteristic, but also on large signal characteristic under a self-biasing condition with the same input and output matching impedances.

Keywords

UHF bipolar transistors; impedance matching; lumped parameter networks; power bipolar transistors; DC characteristic; Kirk effect; MEXTRAM BJT models; SiGe; distributed scalable SiGe power device; external lumped elements; high-current behaviors; high-injection effect; interconnection layout; large signal model; matching impedances; parasitic effects; quasi-saturation effect; self-biasing condition; small signal characteristic; small unit device; Design engineering; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Integrated circuit interconnections; Power engineering computing; Power system modeling; Signal design; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320562

Filename

1320562