Title :
A distributed scalable SiGe power device large signal model based on MEXTRAM 504
Author :
Yoon, S.-W. ; Laskar, J. ; Cho, D.H. ; Hong, K.S. ; Shin, H.J. ; Park, K.W. ; Yi, S.D. ; Suh, K.-P. ; Park, B.H.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present a large signal power device model consisting of MEXTRAM BJT models of a small unit device and external lumped elements explaining all the parasitic effects resulting from the interconnection layout. The parasitic elements are included in the model in a distributed way. For the unit device, the device with an emitter size of 24 μm2 is modeled by a MEXTRAM 504 BJT model, which shows accurate high-current behaviors such as Kirk effect, high-injection effect, and quasi-saturation effect. The power device with an emitter size of 480 μm2 is designed to verify the model. DC, small signal, and large signal measurements are compared with the simulation results using the model; both results are quite well matched not only on DC and small signal characteristic, but also on large signal characteristic under a self-biasing condition with the same input and output matching impedances.
Keywords :
UHF bipolar transistors; impedance matching; lumped parameter networks; power bipolar transistors; DC characteristic; Kirk effect; MEXTRAM BJT models; SiGe; distributed scalable SiGe power device; external lumped elements; high-current behaviors; high-injection effect; interconnection layout; large signal model; matching impedances; parasitic effects; quasi-saturation effect; self-biasing condition; small signal characteristic; small unit device; Design engineering; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Integrated circuit interconnections; Power engineering computing; Power system modeling; Signal design; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320562
