Title :
Cu2O doped ZnO as moisture sensor
Author :
Pandey, N.K. ; Tiwari, Kamlesh ; Roy, Anirban
Author_Institution :
Dept. of Phys., Univ. of Lucknow, Lucknow, India
Abstract :
Paper reports morphological and humidity sensing application of Cu2O doped ZnO composite prepared by solid state reaction. Pellet samples of ZnO-Cu2O nanocrystalline powders with 5, 10, 15 and 20 weight % of Cu2O in ZnO have been prepared. These pellets have been annealed at temperatures 200-500°C. When samples have been exposed to humidity, it has been observed that as relative humidity increases, resistance of the pellet decreases for the entire range of humidity from 10% to 90%. The sample with 20% of Cu2O doped in ZnO shows best results with sensitivity of 4.23 M¿/%RH when annealed at 500°C. This sensing element manifests lower hysteresis, less effect of ageing and high reproducibility for annealing temperature 500°C. For this sensing element the two values of activation energy corresponding to two slopes in Arrhenius plot are 0.0274 eV for the temperature range 200-400°C and 0.0839 eV for the temperature range 400-500°C. XRD pattern shows peaks of hexagonal zincite and monoclinic tenorite. As calculated from Scherer´s formula the particle size for this sensing elements is 119 nm and according to SEM micrograph 104 nm.
Keywords :
X-ray diffraction; annealing; copper compounds; doping; humidity measurement; humidity sensors; nanostructured materials; scanning electron microscopy; zinc compounds; Arrhenius plot; SEM micrograph; Scherer formula; XRD; ZnO:Cu2O; annealing temperature; hexagonal zincite; moisture sensor; monoclinic tenorite; morphological-humidity sensing application; nanocrystalline powders; pellet samples; size 104 nm; size 119 nm; temperature 200 degC to 500 degC; Aging; Annealing; Humidity; Hysteresis; Powders; Reproducibility of results; Solid state circuits; Temperature distribution; Temperature sensors; Zinc oxide; Annealing Temperature; Cu2O; Electrical Properties; Humidity Sensor; ZnO;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398151