Title :
Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology
Author :
Paidi, V. ; Griffith, Z. ; Wei, Y. ; Dahlstrom, M. ; Parthasarathy, N. ; Urteaga, M. ; Rodwell, M.J.W. ; Fung, A. ; Samoska, L.
Author_Institution :
Dept. of ECE, California Univ., Santa Barbara, CA, USA
Abstract :
We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. A single stage common base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.77 dBm output power with 5-dB associated power gain at 172 GHz. The two-stage common base amplifier exhibited 8.1 dBm output power with 6.35 dB associated power gain at 176 GHz and demonstrated 9.13 dBm of saturated output power. This two stage common base amplifier exhibited 10.3 dBm output power with 3.48-dB associated power gain at 150.2 GHz.
Keywords :
MMIC power amplifiers; bipolar analogue integrated circuits; circuit tuning; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; 140 to 220 GHz; 3.48 dB; 5 dB; 6.35 dB; 7 dB; InP; InP mesa DHBT technology; common base power amplifiers; double heterojunction bipolar transistor; single stage common base tuned amplifier; Broadband amplifiers; DH-HEMTs; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Polyimides; Power amplifiers; Power generation;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320567
