Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology

Author

Paidi, V. ; Griffith, Z. ; Wei, Y. ; Dahlstrom, M. ; Parthasarathy, N. ; Urteaga, M. ; Rodwell, M.J.W. ; Fung, A. ; Samoska, L.

Author_Institution

Dept. of ECE, California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

189

Lastpage

192

Abstract

We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. A single stage common base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.77 dBm output power with 5-dB associated power gain at 172 GHz. The two-stage common base amplifier exhibited 8.1 dBm output power with 6.35 dB associated power gain at 176 GHz and demonstrated 9.13 dBm of saturated output power. This two stage common base amplifier exhibited 10.3 dBm output power with 3.48-dB associated power gain at 150.2 GHz.

Keywords

MMIC power amplifiers; bipolar analogue integrated circuits; circuit tuning; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; 140 to 220 GHz; 3.48 dB; 5 dB; 6.35 dB; 7 dB; InP; InP mesa DHBT technology; common base power amplifiers; double heterojunction bipolar transistor; single stage common base tuned amplifier; Broadband amplifiers; DH-HEMTs; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Polyimides; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320567

Filename

1320567