Title :
Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts
Author :
Vieweg, N. ; Mikulics, M. ; Scheller, M. ; Ezdi, K. ; Wilk, R. ; Hübers, H.W. ; Koch, M.
Author_Institution :
Inst. of High Freq. Technol., Tech. Univ. Braunschweig, Braunschweig
Abstract :
We present a systematic study of annealed ohmic contacts and their effect on the performance of THz antennas. Annealing of the ohmic contact causes a strong decrease in the contact resistance and an enhancement of the electric field distribution inside the antenna structure. This doubles the output power of the devices compared to conventional photoconductors with standard Schottky-type metallization fabricated on an identical material.
Keywords :
III-V semiconductors; annealing; contact resistance; gallium arsenide; germanium alloys; gold alloys; nickel; ohmic contacts; semiconductor-metal boundaries; submillimetre wave antennas; GaAs-Ni-AuGe-Ni; Schottky-type metallization; THz antennas; annealed ohmic contacts; annealing; contact resistance; conventional photoconductors; electric field distribution; low-temperature-grown gallium arsenide; Annealing; Dipole antennas; Gallium arsenide; Gold; Metallization; Ohmic contacts; Photoconducting devices; Photoconducting materials; Stripline; Temperature;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665767
