Ruthenium a new thermally stable compensator in InP

Author

Dadgar, A. ; Stenzel, O. ; Kohne, L. ; Naser, A. ; Strassburg, Martin ; Stolz, W. ; Schumann, H. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

57

Lastpage

59

Abstract

Semiinsulating InP has been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using different P- and Ru-precursors. Studies of the Ru diffusion coefficient yield, that Ru is a thermally highly stable dopant with a diffusion coefficient of D_Ru(800°C)⩽1×10^-15 cm²/s. Additionally Ru shows no unwanted interdiffusion with p-type dopants. From deep level transient spectroscopy (DLTS) measurements we conclude, that Ru introduces several deep centers in InP which are suited to compensate electrons as well as holes. Resistivities above 5×10 ⁷ Ω cm and 5×10⁸ Ω cm have been achieved under electron and hole injection conditions, respectively

Keywords

III-V semiconductors; MOCVD coatings; deep level transient spectroscopy; deep levels; diffusion; indium compounds; ruthenium; semiconductor thin films; 5E7 ohmcm; 5E8 ohmcm; 800 C; InP:Ru; LP-MOCVD; deep centers; deep level transient spectroscopy; diffusion coefficient yield; electron injection; hole injection; low pressure metalorganic chemical vapor deposition; resistivities; thermally stable compensator; Charge carrier processes; Doping; Heat treatment; Indium phosphide; Iron; P-i-n diodes; Performance evaluation; Spectroscopy; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712400

Filename

712400