Title :
Post annealing effects on InP single crystals grown by liquid encapsulated Czochralski method
Author :
Iwasaki, Koji ; Tanaka, Yuugo ; Ishii, Kenji ; Sato, Takayuki
Author_Institution :
Chichibu Works, Showa Denko K.K., Saitana, Japan
Abstract :
We have investigated the post-growth annealing effects on InP single crystals. The materials we used were S-doped and Fe-doped InP single crystals grown by the liquid encapsulated Czochralski (LEC) method. These crystals were annealed at 900°C-980°C for 10 hours. Residual stress in the crystals was reduced by annealing, and a higher annealing temperature was more effective for the reduction of stress. A reduction of PL intensity was observed in annealed S-doped crystals, and the reduction was remarkable on the periphery. In the case of Fe-doped crystals a significant change of the PL signal was not observed, but there is some increase of Hall mobility
Keywords :
Hall mobility; III-V semiconductors; annealing; crystal growth from melt; indium compounds; infrared spectra; internal stresses; iron; photoluminescence; semiconductor growth; sulphur; 10 hr; 900 to 980 degC; Hall mobility; InP:Fe; InP:S; liquid encapsulated Czochralski method; photoluminescence intensity; post-growth annealing; residual stress; single crystals; Annealing; Crystalline materials; Frequency; Gallium arsenide; Hall effect; Indium phosphide; Liquid crystals; Residual stresses; Semiconductor materials; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712408
