Improvement of the surface quality of InP wafers using TOF-SIMS as characterisation

Author

Thomas, N. ; Jacob, G. ; Hardtdegen, G.

Author_Institution

InPACT, Pombliere, Moutiers, France

fYear

1998

fDate

11-15 May 1998

Firstpage

96

Lastpage

99

Abstract

At the ´97 IPRM conference, we introduced the TOF SIMS as a powerful characterisation tool for analysis of the extreme surface of InP wafers (1). Indeed, an ultra clean surface of EPIREADY wafers is more and more requested by the epitaxy community. Impurities on the surface can behave in two ways; firstly, they can impede a good nucleation and the epilayer will be rough; secondly, they can be electrically active (for example: silicon) and generate a conductive layer at the epi/substrate interface which is detrimental for the device´s performances. Thanks to the results obtained with the TOF-SIMS, InPact has been able to develop a new process for the cleaning of wafers (nInP). Since then, we have been gathering reliable data on a large number of wafers and the quality has been improved further

Keywords

III-V semiconductors; impurities; indium compounds; secondary ion mass spectra; surface cleaning; surface contamination; time of flight mass spectra; EPIREADY wafers; InP; InP wafers; TOF-SIMS; characterisation; cleaning; conductive layer; epi/substrate interface; impurities; nucleation; surface quality; ultra clean surface; Argon; Etching; Impurities; Indium phosphide; Jacobian matrices; Methanol; Pollution measurement; Rough surfaces; Surface cleaning; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712410

Filename

712410