Title :
A high-efficiency miniaturized SiGe Ku-band balanced frequency doubler
Author :
Hung, Juo-Jung ; Hancock, Timothy M. ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A monolithic SiGe balanced frequency doubler has been designed and measured for Ku-band application. The circuit operates with a 2 V supply voltage and consumes only 28 mW of DC power when the doubler is biased close to class B operation, with an input power of 1.5 dBm. An output power of 5-6 dBm is obtained from 15.4-18 GHz and the fundamental suppression is better than 25 dB. It has a high power added efficiency (PAE) of 9.2% and occupies only 700×350 μm2 of chip area.
Keywords :
Ge-Si alloys; bipolar MMIC; frequency multipliers; semiconductor materials; 15.4 to 18 GHz; 2 V; 28 mW; 350 micron; 700 micron; 9.2 percent; Ku-band balanced frequency doubler; MMIC; SiGe; bipolar process; class B operation biasing; fundamental suppression; high-efficiency frequency doubler; power added efficiency; Capacitors; Circuit simulation; Frequency; Germanium silicon alloys; Impedance matching; Inductors; Power engineering and energy; Power engineering computing; Silicon germanium; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320576
