Title :
Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm
Author :
Kollakowski, St. ; Droge, E. ; Bottcher, E.H. ; Strittmatter, A. ; Reimann, O. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
High-speed multi-wavelength waveguide-integrated metal-semiconductor-metal (MSM) photodetectors based on MOCVD grown InP/lnGaAs/InAlGaAs layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm and an electrode feature size as small as 0.3 μm. An internal coupling efficiency of ⩾90% has been achieved for detector lengths as short as 20 μm and 30 μm at 1.3 and 1.55 μm wavelength, respectively. A 3-dB bandwidth of 50 GHz at 1.55 μm wavelength has been obtained
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; optical waveguides; photodetectors; semiconductor epitaxial layers; 0.3 mum; 1.3 mum; 1.55 mum; 150 nm; 20 mum; 30 mum; 50 GHz; 90 percent; InP-InGaAs-InAlGaAs; MOCVD layers; absorbing layer thickness; bandwidth; electrode feature size; evanescent field coupled detectors; high-speed multi-wavelength photodetector; internal coupling efficiency; waveguide-integrated MSM photodetector; Bandwidth; Detectors; Electrodes; Etching; Indium gallium arsenide; Indium phosphide; MOCVD; Optical coupling; Optical waveguides; Photodetectors;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712453
