A tunable and program-erasable capacitor on Si with excellent tuning memory

Author

Lai, C.H. ; Lee, C.F. ; Chin, Albert ; Zhu, C. ; Li, M.-F. ; McAlister, S.P. ; Kwong, D.L.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

6-8 June 2004

Firstpage

259

Lastpage

262

Abstract

A novel tunable and program-erasable high-κ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C_max/C_min tunability of 12 is obtained due to the high-κ AlN dielectric with high 5 μF/μm² capacitance density. Good tuning memory is evidenced from the small V_th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.

Keywords

III-V semiconductors; MIS capacitors; aluminium compounds; circuit resonance; circuit tuning; dielectric thin films; impedance matching; programmable circuits; wide band gap semiconductors; -4 V; 10000 s; 4 V; AlN-Si; charge trapping; high capacitance density; high-k MIS capacitor; impedance mismatch; program-erasable capacitor; resonance frequency; tunable capacitor; tuning memory; Capacitors; Circuit optimization; Impedance; RLC circuits; Resonance; Resonant frequency; Tunable circuits and devices; Tuned circuits; Tuning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320589

Filename

1320589