Title :
Research of meso-piezoresistive effect micromachined gyroscope
Author :
Liu, Jun ; Du, Kang ; Wang, Ruirong ; Shi, Yunbo
Author_Institution :
Sci. & Technol. on Electron. Test & Meas. Lab., North Univ. of China, Taiyuan, China
Abstract :
A novel GaAs based micromachined gyroscope with electrostatic driven meso-piezoresistive detection is presented, with the advantage of high sensitivity and simple fabrication process comparison with silicon based. According to the present process technology, the gyroscope is fabricated and capsulated. The knocking experiment in driven direction is preliminary verify that the gyroscope can be successfully driven. The experiment of detection direction to test the sensitivity of gyroscope is also carried out. From the testing result it is know that the testing sensitivity of gyroscope is 100.74mV / g in the case of 4KHz and different gravity acceleration.
Keywords :
III-V semiconductors; gallium arsenide; gyroscopes; micromachining; microsensors; piezoresistive devices; resonant tunnelling diodes; GaAs; detection direction; double barrier resonant tunneling diode; electrostatic driven mesopiezoresistive detection; fabrication process; frequency 4 kHz; gravity acceleration; mesopiezoresistive effect; micromachined gyroscope; Force; Gallium arsenide; Gyroscopes; Resonant tunneling devices; Sensitivity; Testing; Vibrations; Meso-Piezoresistive effect; experiment testing; micromachined gyroscope;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017280
