Title :
Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop
Author :
Mostafa, Mohamed A I ; Tuncer, Sencan ; Luff, Gwilym
Author_Institution :
Micro Linear Corp., San Jose, CA, USA
Abstract :
A 3.9 GHz LC VCO is fabricated using a 0.35 μm SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; feedback oscillators; low-power electronics; modulation; phase noise; semiconductor materials; 0.35 micron; 2.5 V; 3.9 GHz; 4 mA; BiCMOS; SiGe; data modulation correction loop; low phase noise VCO; low power LC VCO; modulation compensation feedback loop; transmit mode modulation port; tuning circuit modulation deviation; tuning range; Circuit optimization; Germanium silicon alloys; Inductors; Phase modulation; Phase noise; Silicon germanium; Spirals; Transceivers; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320594
