Title :
Comparison of contemporary CMOS ring oscillators
Author :
Badillo, D.A. ; Kiaei, Sayfe
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
This work presents measured data and analysis, accurately comparing three, four-stage ring oscillators. The delay cell topologies considered here include the linear source coupled, and two saturating types. Each oscillator is fabricated concurrently in a 1.8 V, 0.18 μm CMOS process and is characterized for phase noise, power consumption and tuning range.
Keywords :
CMOS integrated circuits; circuit tuning; oscillators; phase noise; 0.18 micron; 1.8 V; CMOS ring oscillators; four-stage ring oscillators; linear source coupled delay cell; phase noise; power consumption; saturating delay cell topology; tuning range; Data analysis; Delay; Frequency; Inverters; Latches; Phase noise; Ring oscillators; Topology; Tuning; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320596
