Title :
Numerical analysis of biased GaAs/AlGaAs intersubband Raman laser
Author :
Miura, M. ; Katayama, S.
Author_Institution :
Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol., Nomi
Abstract :
We demonstrate the potential for tunable laser operation at mid-infrared wavelength by using biased GaAs/AlGaAs intersubband Raman laser (IRL). From the numerical analysis for time evolution of Stokes photons and electron populations based on non-equilibrium rate equations, it is shown that the IRL output wavelength varies from 14.3 to 11.7 mum by changing the bias from -50 to 0 kV/cm when pumping wavelength is assumed to be 9.1 mum. This indicates that IRL can work as a voltage-controlled frequency modulator.
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; gallium arsenide; numerical analysis; optical pumping; semiconductor lasers; stimulated Raman scattering; GaAs-AlGaAs; Stokes photons; electron population; intersubband Raman laser; mid-infrared wavelength; nonequilibrium rate equation; numerical analysis; pumping wavelength; stimulated intersubband Raman scattering; tunable laser operation; voltage-controlled frequency modulator; Electrons; Gallium arsenide; Laser theory; Numerical analysis; Optical pumping; Optical scattering; Pump lasers; Raman scattering; Resonance light scattering; Stimulated emission;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665796
