DocumentCode :
3279996
Title :
Innovative wafer-based interconnect enabling system integration and semiconductor paradigm shifts
Author :
Yu, Daren
Author_Institution :
Integrated Interconnect & Package Dev., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
fYear :
2013
fDate :
13-15 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
In semiconductor world, there is a new paradigm shift from chip-scaling to system-scaling to meet the ever-increasing electronic system demands for performance and functionality, and for reduction of system form factor, power and cost. This shift is also triggered by the fast increasing challenges for industry to sustain Moore´s Law. System scaling needs advanced package technologies. Conventionally, package technologies use different tool sets and different materials from those used in wafer fab. Innovative wafer-based technology is proposed here to fabricate advanced packaging that, in turn, enables the system scaling - a new paradigm shift. Another new paradigm shift enabled here is that the advanced packaging shifts from conventional packaging to the innovative wafer-based technology. The innovations cover three major system scaling architecture/technologies: wafer-level-packaging (fan-in and fan-out), through-Si-via (3DIC and interposer) and ultra-thin package-on-package (PoP) for both high performance and mobile devices. We also re-invent microelectronics, continue delivering more advanced electronic systems, and help to sustain Moore´s Law.
Keywords :
integrated circuit interconnections; three-dimensional integrated circuits; wafer level packaging; 3DIC; Moore´s law; advanced packaging technologies; innovative wafer-based interconnect enabling system integration; interposer; semiconductor paradigm shifts; through-Si-via; ultra-thin package-on-package; wafer-level-packaging; Gold; Nickel; Packaging; Speech; Stacking; Through-silicon vias; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
Type :
conf
DOI :
10.1109/IITC.2013.6615548
Filename :
6615548
Link To Document :
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