DocumentCode :
3280016
Title :
Spanning the spectrum of interconnects from trenches of double patterning to system level
Author :
Nagaraj, N.S.
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
fYear :
2013
fDate :
13-15 June 2013
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. This talk covers the fascinating aspects of the whole spectrum of interconnects from trenches of silicon in nanometers to multi-millimeter long wires at system level and how common principles govern them. This talk starts at the silicon level, where double and triple patterning is becoming more common at lower level interconnects and these offer unique challenges and opportunities in manufacturability, variability and signal/power integrities. Then, it covers the CMP and inter-layer variation induced challenges and opportunities at global interconnects in silicon and expands to interposer and TSV aspects. This is followed by package and board level challenges and opportunities in manufacturability, electromagnetic interference and signal/power integrities. A concept of `Interconnect Continuum´ is introduced to show how viewing the whole spectrum in continuity helps in optimizing performance, power, cost and overall reliability.
Keywords :
chemical mechanical polishing; electromagnetic interference; elemental semiconductors; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; nanopatterning; nanowires; silicon; three-dimensional integrated circuits; CMP; Si; TSV; board level challenges; double patterning; electromagnetic interference; interconnects; interlayer variation; manufacturability; multimillimeter long wires; nanometer long wires; package challenges; reliability; signal-power integrities; silicon trenches; system level; triple patterning; Abstracts; Educational institutions; Electromagnetic interference; Reliability; Silicon; Through-silicon vias; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
Type :
conf
DOI :
10.1109/IITC.2013.6615549
Filename :
6615549
Link To Document :
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