Analysis of microwave noise sources in 150 GHz SiGe HBTs

Author

Sakalas, P. ; Schroter, M. ; Scholz, R.F. ; Jiang, H. ; Racanelli, M.

Author_Institution

CEDIC, Technische Univ. Dresden, Germany

fYear

2004

fDate

6-8 June 2004

Firstpage

291

Lastpage

294

Abstract

Bias dependent microwave noise characteristics of 150 GHz SiGe HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor model HICUM. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on HICUM. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. Correlation between base and collector current shot noise in SiGe is found to reduce NF_min in the current density and frequency range of investigation.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; 150 GHz; 2 to 26 GHz; HBT microwave noise sources; SiGe; base current shot noise; bias dependent microwave noise characteristics; collector current shot noise; compact bipolar transistor model; current density; frequency dependent high-frequency noise; minimum noise figure; noise mechanisms; noise source analysis; noise source decomposition; Circuit noise; Current density; Delay effects; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Noise figure; Semiconductor device noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320600

Filename

1320600