DocumentCode
3280373
Title
Low-voltage process-adaptive logic and memory arrays for ultralow-power sensor nodes
Author
Roy, Kaushik ; Kulkarni, Jaydeep ; Hwang, Myeong
Author_Institution
Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
25-28 Oct. 2009
Firstpage
185
Lastpage
188
Abstract
We propose process variation tolerant circuit techniques for robust digital subthreshold logic and memory for ultralow power sensor nodes. Based on the concepts developed in this paper, we present an 8Ã8 process-tolerant FIR filter, working in both superthreshold and subthreshold regions featuring adaptive Ã-ratio modulation and integrated level converters. Ultra-dynamic voltage scaling (UVDS) enables the filter operation at 85 mV consuming 40 nW. For memory applications, we propose Schmitt Trigger based SRAM bitcell exhibiting built-in process variation tolerance. Functional SRAM with the proposed memory bitcell is demonstrated at 160 mV in 0.13 ¿m CMOS technology.
Keywords
CMOS digital integrated circuits; FIR filters; SRAM chips; logic arrays; low-power electronics; wireless sensor networks; CMOS technology; Schmitt trigger based SRAM bitcell; adaptive Ã\x9f-ratio modulation; digital subthreshold logic arrays; integrated level converters; low-voltage process-adaptive logic arrays; memory arrays; power 40 nW; process variation tolerant circuit techniques; process-tolerant FIR filter; size 0.13 mum; ultradynamic voltage scaling; ultralow power sensor nodes; voltage 160 mV; voltage 85 mV; wireless sensor nodes; CMOS logic circuits; CMOS technology; Dynamic voltage scaling; Finite impulse response filter; Logic arrays; Logic circuits; MOS devices; Robustness; Sensor arrays; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2009 IEEE
Conference_Location
Christchurch
ISSN
1930-0395
Print_ISBN
978-1-4244-4548-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2009.5398200
Filename
5398200
Link To Document