Title :
Early failure of short-lead metal line and its EM characterization with Wheatstone bridge test structure in advanced Cu/ULK BEOL process
Author :
Tae-Young Jeong ; Windu, Sari ; Dong-Cheon Baek ; Jinseok Kim ; Kyuho Tak ; Lee, Minhung ; Hyuniun Choi ; Sangwoo Pae ; Park, Jongho
Author_Institution :
Technol. Quality & Reliability Group, Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
Early failure of the short-lead metal line EM (Electromigration) is investigated. Applying Wheatstone bridge (WSB) test structure and 3-parameter lognormal distribution enables to reduce sample size and time-to-fail (TTF) variation governed by early fails causing a poor standard deviation, EM lifetime is accurately predicted and improved by ~280×. In particular, EM TTF at lower percentiles can be well represented by 3-parameter lognormal. With respect to physical aspects of void, EM behaviors of the short-lead and long-lead metal line are addressed based on experimental results compared with Monte-Carlo simulations to support the Blech´s back-stress effects.
Keywords :
Monte Carlo methods; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; log normal distribution; stress effects; 3-parameter lognormal distribution; Blech back-stress effects; Monte-Carlo simulations; Wheatstone bridge test structure; advanced Cu-ULK BEOL process; electromigration characterization; sample size; short-lead metal line failure; time-to-fail variation; Electromigration; Mathematical model; Metals; Monte Carlo methods; Periodic structures; Reliability; Resistance;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615569