Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications

Author

Zhou, Changjian ; Peng, Pinggang ; Yang, Yi ; Ren, Tianling

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

134

Lastpage

137

Abstract

The structural and electrical characteristics of Metal-Pb(Zr_0.53Ti_0.47)O₃ (PZT)-TiO₂-Si structures with TiO₂ insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred <;110>; orientation PZT thin film was obtained on the well crystallized TiO₂ insulator layer. For the Pt/PZT/TiO₂ (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10^-7A/cm², 6.21×10^-7A/cm² were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications.

Keywords

MIS capacitors; MOCVD; elemental semiconductors; ferroelectric thin films; lead alloys; leakage currents; piezoelectric thin films; random-access storage; silicon; surface morphology; titanium compounds; zirconium compounds; MOCVD method; Pb(Zr_0.53Ti_0.47)O₃-TiO₂-Si; capacitor; charge injection model; electrical characteristics; electrode material; insulating layer; leakage current density; memory window; metal organic chemical vapor deposition; nonvolatile memory applications; structural characteristics; voltage 0.5 V; voltage 2.2 V; voltage 5 V; voltage 7 V; Capacitance-voltage characteristics; Capacitors; Electrodes; Insulators; Leakage current; Nonvolatile memory; Silicon; FeRAM; MFIS; PZT; TiO2; charge injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017313

Filename

6017313