• DocumentCode
    3280481
  • Title

    Design and evaluation of quantum dot sensors for making superficial x-ray energy radiation measurements

  • Author

    Kang, Q.S. ; Yeow, J.T.W. ; Barnett, R. ; Gao, X.

  • fYear
    2011
  • fDate
    20-23 Feb. 2011
  • Firstpage
    138
  • Lastpage
    141
  • Abstract
    The extraordinary physical properties of quantum dot (QD) materials such as high radiation sensitivity and good radiation resistivity indicate their potential for use in the fabrication of radiation sensors. This paper reports the design and fabrication of two kinds of radiation sensors based on ZnO and CdTe QDs. Both sensors are characterized using a Gulmay Medical D3000 DXR unit for superficial x-ray irradiation with source photon energies that range from 36.9 to 64.9 keV. The QD radiation sensors exhibit excellent linearity with respect to different photon energy doses, radiation source to device surface distances, and field sizes. The effects of the electrode separation and the area density of the QD layer are also investigated. All sensors characterized show an outstanding repeatability under photon irradiation, with a signal variation less than 1%.
  • Keywords
    II-VI semiconductors; X-ray detection; cadmium compounds; electric sensing devices; electrodes; nanosensors; radiation detection; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; CdTe; Gulmay Medical D3000 DXR unit; QD layer area density; QD radiation sensors; ZnO; electrode separation; electron volt energy 36.9 keV to 64.9 keV; photon energy doses; photon irradiation; quantum dot materials; quantum dot sensors; radiation sensitivity; radiation sensors; radiation source; source photon energy; superficial X-ray energy radiation measurements; superficial X-ray irradiation; Electrodes; Ionizing radiation sensors; Materials; Photonics; Sensor phenomena and characterization; Zinc oxide; CdTe; ZnO; quantum dot; radiation sensor; x-ray;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-775-7
  • Type

    conf

  • DOI
    10.1109/NEMS.2011.6017314
  • Filename
    6017314