Model optimization of nanocrystalline Si∶H HIT solar cells

Photovoltaic properties of nanocrystalline Si:H (nc-Si:H) heterojunction with intrinsic thin layer (HIT) solar cells with the structure of TCO/nc-Si:H(p⁺)/a-Si:H(i)/nc-Si:H(n⁺)/Al was studied by a numerical simulation software of AMPS-1D in this paper. The results show that open-circuit voltages (Voc) and fill factors (FF) of the cell can be obviously affected by interface charge states on heterojunction. In this HIT solar cell, a intrinsic a-Si:H layer is used to reduce effectively carrier recombination rate at interface. The simulated results indicate that HIT solar cell with back surface field structure on n-type substrate can obtain higher performance.